Electrical and optical conductivities of hole gas in p-doped bulk III–V semiconductors
نویسندگان
چکیده
منابع مشابه
Theoretical study of interacting hole gas in p-doped bulk III-V semiconductors
We study the homogeneous interacting hole gas in p-doped bulk III-V semiconductors. The structure of the valence band is modeled by Luttinger’s Hamiltonian in the spherical approximation, giving rise to heavy and light hole dispersion branches, and the Coulomb repulsion is taken into account via a self-consistent HartreeFock treatment. As a nontrivial feature of the model, the self-consistent s...
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ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 2016
ISSN: 0021-8979,1089-7550
DOI: 10.1063/1.4963362